First-principles simulations of SiO<SUB>2</SUB> at high pressure and temperature

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ADS bibcode: 2001AGUFM.T22E..06T
year: 2001
Listed Authors: Trave, A.; Trave, A.; Scandolo, S.; Pasquarello, A.; Car, R.; Car, R.
Listed Institutions: Department of Chemistry, Princeton University, Princeton, NJ 08544 United States; Princeton Materials Institute and Department of Geosciences, Princeton University, Princeton, NJ 08544 United States; Princeton Materials Institute and Department of Geosciences, Princeton University, Princeton, NJ 08544 United States; Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), EPFL, PPH-Ecublens, Lausanne, CH-1015 Switzerland; Department of Chemistry, Princeton University, Princeton, NJ 08544 United States; Princeton Materials Institute and Department of Geosciences, Princeton University, Princeton, NJ 08544 United States

First-principles simulations of SiO<SUB>2</SUB> at high pressure and temperature

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